Engineers from North Carolina State University, Adroit Materials and Poland’s Institute of High-Pressure Physics have reduced ...

New technical paper “Laser slice thinning of GaN-on-GaN high electron mobility transistors” from researchers at Nagoya University, Hamamatsu Photonics, and National Institute for Materials Science, ...

This article is the first in a series of articles written for the power systems design engineer and engineering manager. Throughout the next several months we will look at gallium nitride technology ...

Wide-bandgap materials such as gallium nitride (GaN) have emerged as technologies to take electronic performance to the next level. So, what’s “real” about GaN and what’s a myth? Components based on ...