Researchers have realized a f<sub>T</sub>/f<sub>MAX</sub> 245GHz/450GHz SiGe:C heterojunction bipolar transistor (HBT) device, a key enabler for future high-volume ...
Researchers at the University of Illinois at Urbana-Champaign have demonstrated the room-temperature operation of a heterojunction bipolar transistor laser, moving it an important step closer to ...
An indium phosphide-based double heterojunction bipolar transistor (DHBT) with a maximum frequency of 450GHz and a transition frequency of 282GHz has been reported by researchers at the University of ...
BAE Systems in the US has been working with Vitesse Semiconductor and the University of Illinois to design what they claim is one of the fastest semiconductor devices ever produced. Made using an ...
TOKYO — Hitachi Ltd.'s Central Research Laboratory has developed a prototype heterojunction bipolar transistor (HBT) that uses a novel epitaxial growth method — employing silicon, germanium and carbon ...
Researchers at the University of Illinois at Urbana-Champaign have demonstrated the room-temperature operation of a heterojunction bipolar transistor laser. "We have shown that the transistor laser, ...
Applications of energy band models for semiconductors. Carrier statistics and transport. Diodes, bipolar and field-effect transistors. Integrated circuits. Heterojunction devices. COURSE GOALS: The ...
Transistors have long served as the building blocks of microelectronics. More recently, microchip lasers have been emerging as cornerstones of light-based circuitry, or photonics. Now, engineers have ...
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