The "UnitedSiC UJN1205K 1200V SiC JFET Complete Teardown Report" report has been added to ResearchAndMarkets.com's offering. This report presents a deep technology analysis of the UJN1205K device, ...
Hitachi has developed a SiC-based ‘TED-MOS’ (Trench-Etched-Double-Diffused MOS) device using a fin-structured trench MOSFET based on the conventional DMOS-FET. An energy saving of 50% over a DMOS-FET ...
Wide bandgap semiconductors have proven to be more profitable and effective than traditional silicon-based semiconductors in the electronic instrument industry. Wide bandgap silicon carbide (SiC) ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results