Abstract: A novel gate-all-around (GAA) nanosheet field-effect transistor (NSFET) with bottom p-i-n isolation is proposed for the first time, which can effectively suppress the parasitic subchannel ...
Abstract: This study investigates variations in quantum well (QW) width and the influence of temperature on the electrical behavior of quantum well heterojunction bipolar transistors (QW-HBTs), ...
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