Toshiba explained that by applying this technique, gate density for 45-nm CMOS technology is boosted to 2.6 times higher than that of 65-nm CMOS technology, and surpasses the typical gain of 2 times ...
ROHM’s ultra-compact complementary metal–oxide–semiconductor (CMOS) operational amplifier (op amp) TLR1901GXZ achieves the ...
LONDON — Fujitsu Laboratories Ltd. has developed a selector chip capable of throughputs of up to 50Gbit/s that will be manufactured on a 90-nm CMOS process. The device, initial details of which were ...
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